SiC wafer,Silicon CarbideSubstrate
|
Property
|
4H-SiC,SingleCrystal
|
6H-SiC,SingleCrystal
|
|
LatticeParameters
|
a=3.076Å c=10.053Å
|
a=3.073Å c=15.117Å
|
|
StackingSequence
|
ABAC
|
ABCACB
|
|
LatticeSites
|
1hexagonal(h)1cubic(k)
|
1hexagonal(h)2cubic(k1,k2)
|
|
MohsHardness
|
9.2–9.3
|
9.2–9.3
|
|
Density
|
3.21· 103kg/m3
|
3.21· 103kg/m3
|
|
Therm.ExpansionCoefficient
|
4–5·10-6/K
|
4–5·10-6/K
|
|
RefractionIndex(at l=467nm)
|
no=2.719ne=2.777
|
no=2.707ne=2.755
|
|
DielectricConstant
|
9.72
|
9.72
|
|
ThermalConductivity
|
370W/mK
|
490W/mK
|
|
Bandgap
|
3.23eV
|
3.00eV
|
|
Break-DownElectricalField
|
3–5·108V/m
|
3–5·108V/m
|
|
SaturationDriftVelocity
|
1.9·105m/s
|
1.5·105m/s
|
|
